Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“. Kazimieras Gaivenis, Gytis Juška, Vidas Kalesinskas. 2000.
Latchup-Einschalten — užsklendžiamasis įsijungimas statusas T sritis radioelektronika atitikmenys: angl. latchup turn on vok. Latchup Einschalten, n rus. защёлкивающее включение, n pranc. mise en circuit par capture, f … Radioelektronikos terminų žodynas
mise en circuit par capture — užsklendžiamasis įsijungimas statusas T sritis radioelektronika atitikmenys: angl. latchup turn on vok. Latchup Einschalten, n rus. защёлкивающее включение, n pranc. mise en circuit par capture, f … Radioelektronikos terminų žodynas
užsklendžiamasis įsijungimas — statusas T sritis radioelektronika atitikmenys: angl. latchup turn on vok. Latchup Einschalten, n rus. защёлкивающее включение, n pranc. mise en circuit par capture, f … Radioelektronikos terminų žodynas
защёлкивающее включение — užsklendžiamasis įsijungimas statusas T sritis radioelektronika atitikmenys: angl. latchup turn on vok. Latchup Einschalten, n rus. защёлкивающее включение, n pranc. mise en circuit par capture, f … Radioelektronikos terminų žodynas
Radiation hardening — is a method of designing and testing electronic components and systems to make them resistant to damage or malfunctions caused by ionizing radiation (particle radiation and high energy electromagnetic radiation),[1] such as would be encountered… … Wikipedia
Insulated-gate bipolar transistor — The insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device, noted for high efficiency and fast switching. It switches electric power in many modern appliances: electric cars, variable speed refrigerators, air… … Wikipedia
Thyristor — The thyristor is a solid state semiconductor device with four layers of alternating N and P type material. They act as bistable switches, conducting when their gate receives a current pulse, and continue to conduct for as long as they are forward … Wikipedia
CMOS — For other uses, see CMOS (disambiguation). CMOS inverter (NOT logic gate) Complementary metal–oxide–semiconductor (CMOS) ( … Wikipedia
Single event upset — A single event upset (SEU) is a change of state caused by a low energy ions or electro magnetic or nuclear radiation interferences strike to a sensitive node in a micro electronic device, such as in a microprocessor, semiconductor memory, or… … Wikipedia
Semiconductor device modeling — creates models for the behavior of the electrical devices based on fundamental physics, such as the doping profiles of the devices. It may also include the creation of compact models (such as the well known SPICE transistor models), which try to… … Wikipedia
